Product Information | NuFlare Technology, Inc.

Multi-EB Mask Writer MBM™-2000PLUS

sugiyama — Mon, 20 Feb 2023 02:15:09 +0000

Multi-EB Mask Writer " MBM-2000 " for 3nm+ Node Design Rule

Features

1) Excellent accuracy of 260,000 beams.
2) MBF2.0 date format enables fast write time of complex curvilinear patterns.
3) High throughput and high-precision writing regardless of complex patterns.

Key Parameters

Key Parameters
Mask size	6inch
Image placement	1.3nm(３σ)
Local CD uniformity	0.65nm(３σ)

投稿 Multi-EB Mask Writer MBM™-2000PLUS は株式会社ニューフレアテクノロジーに最初に表示されました。

EPIREVO™ S8 8” single-wafer SiC Epitaxial Reactor

sugiyama — Wed, 23 Nov 2022 11:15:58 +0000

EPIREVO S8 enables high productivity through its 8 inch capability with same configuration and same footprint as EPIREVO S6 for 6 inch wafers.

Features

High productivity

High growth rate: > 50 µm/hour
Long maintenance cycle

Low defect density

Minimum downfall density onto wafer
Long term low defect density

Highly quality

Excellent uniformity(σ/mean) Thickness uniformity : < 2 % (E.E=5 mm) Doping uniformity : < 5 % (E.E.=5 mm)

Excellent wafer temperature control

2 points direct temperature monitoring
Independent temperrature control of IN and OUT heaters

投稿 EPIREVO™ S8 8” single-wafer SiC Epitaxial Reactor は株式会社ニューフレアテクノロジーに最初に表示されました。

Multi-EB Mask Writer MBM™-2000

NuFlare Techonorogy — Wed, 23 Nov 2022 08:04:36 +0000

Multi-EB Mask Writer " MBM-2000 " for 3nm Node Design Rule

Features

1) Excellent accuracy of 260,000 beams.
2) PLDC（Pixel Level Dose Correction）technology enables writing in greater contrast.
3) High throughput and high-precision writing regardless of complex patterns.

Key Parameters

Key Parameters
Mask size	6inch
Image placement	1.4nm(３σ)
Local CD uniformity	0.7nm(３σ)

投稿 Multi-EB Mask Writer MBM™-2000 は株式会社ニューフレアテクノロジーに最初に表示されました。

EB Mask Writer EBM-9500

NuFlare Techonorogy — Wed, 23 Nov 2022 07:56:26 +0000

Variable EB Mask Writer system "EBM-9500PLUS" for 7nm+/5nm node.

Features

1) 50kV acceleration voltage enables writing in greater contrast.
2) Multiple pass writing method improves the performance of shot stitching.
3) Low COO（Cost of Ownership）

Key Parameters

Key Parameters
Mask size	6inch
Image placement	1.8nm（3σ）
Local CD uniformity	1.3nm（3σ）

投稿 EB Mask Writer EBM-9500 は株式会社ニューフレアテクノロジーに最初に表示されました。

Variable EB Mask Writer EBM-8000P/H・EBM-8000P/M

sugiyama — Wed, 23 Nov 2022 07:48:00 +0000

Variable EB Mask Writer system "EBM-8000P/H, EBM-8000P/M" for 45～14nm node.

Features

1) 50kV acceleration voltage enables writing in greater contrast.
2) High throughput with variable stage speed and high current density(400A/㎠)
3) Low COO（ Cost of Ownership ）for wide range technology node.

Key Parameters

Key Parameters
Key Parameters	EBM-8000P/H	EBM-8000P/M
Mask size	6inch	6inch
Image placement	4.3nm（3σ）	6.0nm（3σ）
Local CD uniformity	1.3nm（3σ）	2.5nm（3σ）

投稿 Variable EB Mask Writer EBM-8000P/H・EBM-8000P/M は株式会社ニューフレアテクノロジーに最初に表示されました。

EPIREVO™ G8 8” single-wafer GaN-on-Si MOCVD

sugiyama — Thu, 27 Oct 2022 09:57:36 +0000

The EPIREVO G8 MOCVD system deposits high quality GaN films at high growth-rate on 8 inch Si substrates. EPIREVO G8 enables low cost LED production as well as high performance power-device applications, both of which help Society reduce its carbon foot print.

Features

High productivity

High GaN growth rate : > 9 µm/hour
Fast temperature ramp rate : > 200 ℃/minute

Highly quality

8 inch wafer temperature uniformity : < 2 ℃
1100 ℃ Slip free, Si melt-back free

Low cost

High TMG utilization ratio: > 20 %
High system uptime by in-situ cleaning

投稿 EPIREVO™ G8 8” single-wafer GaN-on-Si MOCVD は株式会社ニューフレアテクノロジーに最初に表示されました。

HT2000FD 8” single-wafer Epitaxial Reactor

sugiyama — Thu, 27 Oct 2022 09:38:27 +0000

HT2000FD can deposit high quality epitaxial films at a low cost, contributing in improved performance and cost reduction of power devices. HT2000FD is an innovative, highly efficient and energy-saving epitaxial reactor capable of depositing films with a thickness of several micrometers to more than 150 µm continuously at a high speed by means of a vertical gas flow and high-speed wafer rotation.

HT2000FD Introduction video

Realize high-speed growth of ultra-thick epi film.

The reactor realized 8.5µm/min. of high-speed growth and less than ±1% of thickness uniformity simultaneously for 170µm of ultra-thick film.

Features

High productivity

Continuous growth of more than 150µm of thick film.
High-speed growth of more than 8µm/min.

Energy-saving

Low power consumption of 120 kVA or less.

Highly efficient

20 to 30% of high gas conversion rate.
Very small amount of by-products

High quality

With a 150µm of film thickness
±1.5% or less of thickness uniformity
±3.0% or less of resistivity uniformity

Robot Wafer Handling

Cassette to Cassette operation

投稿 HT2000FD 8” single-wafer Epitaxial Reactor は株式会社ニューフレアテクノロジーに最初に表示されました。

EPIREVO™ S6 6” single-wafer SiC Epitaxial Reactor

sugiyama — Thu, 27 Oct 2022 08:15:11 +0000

EPIREVO S6 combines improved SiC power device quality with low cost production. The EPIREVO S6 realizes high productivity through its 6 inch capability, greater than 50µm/hour growth rate and high temperature wafer handling.

Features

High productivity

Continuous growth : 150 µm film.
High growth rate: > 50 µm/hour.

Excellent wafer temperature uniformity

4” wafer : < 1 ℃
6” wafer : < 2 ℃

Highly quality

Excellent uniformity(σ/mean)
Thickness uniformity : < 2 %
(E.E=3 mm)
Doping uniformity : < 4 %
(E.E.=6 mm)
Low defect density: 0.02/cm^-2

Auto wafer transfer by robot

Cassette to Cassette wafer transfer

投稿 EPIREVO™ S6 6” single-wafer SiC Epitaxial Reactor は株式会社ニューフレアテクノロジーに最初に表示されました。